Coulomb energy of traps in semiconductor space‐charge regions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354656
Reference14 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
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4. Statistics of the Recombinations of Holes and Electrons
5. Individual defects at the Si:SiO2interface
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