Interface states at the SiO2-Si interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference175 articles.
1. Standardized Terminology for Oxide Charges Associated with Thermally Oxidized Silicon
2. Interface states on semiconductor/insulator surfaces
3. Electronic states at the silicon-silicon dioxide interface
4. Semiconductor Silicon 1981;Schulz,1981
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