Strong light-extraction enhancement in GaInN light-emitting diodes patterned with TiO2 micro-pillars with tapered sidewalls
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4756797
Reference15 articles.
1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2. Design of current flow
3. Improved luminance intensity of InGaN–GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface
4. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
5. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
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