High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films-Reference-Cited by-同舟云学术

High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films

Published:2017-09-04 Issue:10 Volume:111 Page:102106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Lei¹^ORCID,Hosomi Daiki¹,Miyachi Yuta¹,Hamada Takeaki¹,Miyoshi Makoto¹,Egawa Takashi¹

Affiliation:

1. Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

Funder

Japan Science and Technology Agency (JST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference23 articles.

1. High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

2. Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure

3. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

4. High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions

5. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

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