High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching
Author:
Funder
European Union
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3595303
Reference8 articles.
1. (Al,In,Ga)N-based photodetectors. Some materials issues
2. Gated photodetector based on GaN/AlGaN heterostructure field effect transistor
3. High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
4. Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure
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