Kinetic pathway of the ferroelectric phase formation in doped HfO2 films
Author:
Affiliation:
1. Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
2. National Institute of Advanced Industrial Science & Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
Funder
Core Research for Evolutional Science and Technology (CREST)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5003918
Reference36 articles.
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4. From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices
5. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
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