High precision two-dimensional strain mapping in semiconductor devices using nanobeam electron diffraction in the transmission electron microscope
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4886137
Reference11 articles.
1. Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations
2. Nanoscale holographic interferometry for strain measurements in electronic devices
3. Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy
4. Strain Mapping of Interfaces by Quantitative High-Resolution TEM
5. Improved accuracy in nano beam electron diffraction
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