Improved accuracy in nano beam electron diffraction
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/209/i=1/a=012063/pdf
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1. Influence of process-induced stress on device characteristics and its impact on scaled device performance
2. Direct measurement of local lattice distortions in strained layer structures by HREM
3. Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy
4. Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations
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