High mobility, selectively doped InP/GaInAs grown by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98559
Reference4 articles.
1. Two‐dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxy
2. TDEG in In0.53Ga0.47As-InP heterojunction grown by chloride VPE
3. Low pressure-MOCVD growth of Ga0.47In0.53As–InP heterojunction and superlattices
4. Calculated Electron Mobility of Two-Dimensional Electrons in AlInAs/InGaAs and InP/InGaAs Single Heterostructures
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Heterostructure Field-Effect Transistors;Physics of High-Speed Transistors;1993
2. Two-dimensional electronic transport in In0.53Ga0.47As quantum Wells;Applied Physics A Solids and Surfaces;1991-07
3. Effects of substrate orientation, pseudomorphic growth and superlattice on alloy scattering in modulation doped GaInAs;Journal of Crystal Growth;1991-05
4. Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP;Applied Physics Letters;1991-03-04
5. Modulation‐doped AlInAs/InP heterostructures grown by organometallic vapor phase epitaxy;Applied Physics Letters;1990-07-30
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