Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds
Author:
Affiliation:
1. CNR – ISMN, via Gobetti 101, 40129 Bologna, Italy
2. School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom
Funder
Ministero dell'Istruzione, dell'Università e della Ricerca
EC H2020 European Research Council
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5011328
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5. T. Marukame , T. Inokuchi , M. Ishikawa , H. Sugiyama , and Y. Saito , in 2009 IEEE International Electron Devices Meeting (IEDM) (2009), pp. 1–4.
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