Spin-gapless semiconductors: Fundamental and applied aspects-Reference-Cited by-同舟云学术

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Spin-gapless semiconductors: Fundamental and applied aspects

Published:2020-12-14 Issue:22 Volume:128 Page:220902
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rani Deepika¹²^ORCID,Bainsla Lakhan¹³^ORCID,Alam Aftab¹^ORCID,Suresh K. G.¹^ORCID

Affiliation:

1. Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai 400076, Maharashtra, India

2. Department of Physics, Indian Institute of Technology Delhi, Delhi 110016, India

3. Physics Department, University of Gothenburg, 412 96 Gothenburg, Sweden

Funder

Science and Engineering Research Board

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0028918

Reference143 articles.

1. Proposal for a New Class of Materials: Spin Gapless Semiconductors

2. Zero-gap materials for future spintronics, electronics and optics

3. Colossal Electroresistance and Giant Magnetoresistance in Doped PbPdO2Thin Films

4. Achieving high Curie temperature in (Ga,Mn)As

5. Hybrid functional electronic structure of PbPdO2, a small-gap semiconductor

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1. Control of spin on structural stability, mechanical, magneto-optoelectronic and thermodynamic properties of RbTaX (X =P and As) materials: Emerging candidates for opto-spintronics and spin filter applications;Solid State Communications;2024-11

2. Detailed DFT based exploration on spin-gapless features of IrCoNbX (X=Al, Ga, In) alloys;Journal of Magnetism and Magnetic Materials;2024-11

3. First-principles calculations and experimental studies on Cr2MnAl Heusler alloy nanoparticles for spintronics applications;Solid State Sciences;2024-10

4. Direct evidence for a nonzero energy gap and half-metallicity in the diamondlike ferromagnet (Zn,Mn) GeP2;Physical Review B;2024-08-07

5. Unveiling the structure-property relationship in a disordered inverse Heusler alloy Ti2MnAl;Physics Letters A;2024-08

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