Improved reliability of red GaInP vertical-cavity surface-emitting lasers using bias-induced annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121320
Reference7 articles.
1. High-frequency modulation characteristics of red VCSELs
2. Metalorganic vapour-phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes
3. 200/spl deg/C, 96-nm wavelength range, continuous-wave lasing from unbonded GaAs MOVPE-grown vertical cavity surface-emitting lasers
4. Temperature-dependent characteristics and single-mode performance of AlGaInP-based 670-690-nm vertical-cavity surface-emitting lasers
5. Recombination‐enhanced annealing of theE1 andE2 defect levels in 1‐MeV‐electron–irradiatedn‐GaAs
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2. Reliability and Degradation of Vertical-Cavity Surface-Emitting Lasers;Materials and Reliability Handbook for Semiconductor Optical and Electron Devices;2012-08-23
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