Aging mechanisms of broad area high-power ~800nm laser diodes-Reference-Cited by-同舟云学术

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Aging mechanisms of broad area high-power ~800nm laser diodes

Published:2024-03-12 Issue: Volume:26 Page:15
ISSN:
Container-title:High-Power Diode Laser Technology XXII
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Author:

McVay Elaine,Deri Robert,Li Jiang,Baxamusa Salmaan H.,Fenwick William E.,Boisselle Matthew,MIttelberger Daniel,Varley Joel,Swertfeger Rebecca,Gilmore Laina,Crowley Mark,Thiagarajan Prabhu,Song Jiyon,Thaler Gerald,Schuck Christopher,Dusty Adam

Publisher

SPIE

Reference26 articles.

1. Defect evolution during catastrophic optical damage of diode lasers;Hempel;Semiconductor Science and Technology,2011

2. Laser diode reliability: crystal defects and degradation modes

3. Influence of oxygen in AlGaAs-based laser structures with Al-Free active region on device properties

4. Residual oxygen contamination of InAlGaAs SQW high-power laser diodes;Roberts,2000

5. Influence of oxygen on the threshold current of AlGaAs multiple quantum well lasers grown by metalorganic chemical vapor deposition

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