Influence of oxygen on the threshold current of AlGaAs multiple quantum well lasers grown by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. GaAs and Related Compounds 1980;Wallis,1981
2. Correlation of photoluminescence and deep trapping in metalorganic chemical vapor deposited AlxGa1−xAs (0≤x≤0.40)
3. Effects of oxygen and water vapour introduction during MOCVD growth of GaAlAs
4. GaAs and Related Compounds 1982;Tsai,1983
5. Minority carrier lifetime and luminescence in MOVPE-grown (Al,Ga)As epilayers and DH lasers
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