Competing weak localization and weak antilocalization in amorphous indium–gallium–zinc-oxide thin-film transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Competing weak localization and weak antilocalization in amorphous indium–gallium–zinc-oxide thin-film transistors

Published:2017-01-09 Issue:2 Volume:110 Page:022106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Wei-Hsiang¹,Lyu Syue-Ru¹^ORCID,Heredia Elica¹,Liu Shu-Hao¹,Jiang Pei-hsun¹^ORCID,Liao Po-Yung²,Chang Ting-Chang²^ORCID,Chen Hua-Mao³

Affiliation:

1. Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan

2. Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

3. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4974080

Reference34 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes

3. Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals

4. A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

5. Recent progress in processing and properties of ZnO

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crossover between weak antilocalization and weak localization in few-layer WTe2 : Role of electron-electron interactions;Physical Review B;2020-09-29

2. High‐performance vacuum‐processed metal oxide thin‐film transistors: A review of recent developments;Journal of the Society for Information Display;2020-04-27

3. Defect gradient control in amorphous InGaZnO for high-performance thin-film transistors;Journal of Physics D: Applied Physics;2020-01-21

4. A Dual‐Gate InGaZnO 4 ‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection;Advanced Materials Technologies;2019-05-17

5. Room-temperature fabrication of bilayer InZnO:Li/MgZnO:Li thin film transistors using radio frequency magnetron sputtering;Journal of Physics D: Applied Physics;2018-06-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3