Molecular dynamics simulations of void and helium bubble stability in amorphous silicon during heavy-ion bombardment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1791759
Reference38 articles.
1. Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions
2. Atomic displacement processes in irradiated amorphous and crystalline silicon
3. Heat spike and ballistic contributions to mixing in Si
4. MD simulation of ion beam induced crystallization and amorphization in silicon
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