Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. On the fluence dependence of the sputtering yield for low-energy noble gas ions
2. Energy dependence of the sputtering yield of silicon bombarded with neon, argon, krypton, and xenon ions
3. An attempt to understand the sputtering yield enhancement due to implantation of inert gases in amorphous solids
4. Anomalous Time-of-Flight Distributions Observed for Argon Implanted in Silicon and Resputtered byAr+-Ion Bombardment
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1. Molecular dynamics studies of ion beam implantation and patterning of silicon: Effect of noble gas cluster formation;Physical Review B;2018-06-26
2. Surface amorphization, sputter rate, and intrinsic stresses of silicon during low energy Ga+ focused-ion beam milling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-09
3. Molecular dynamics simulations of void and helium bubble stability in amorphous silicon during heavy-ion bombardment;Journal of Applied Physics;2004-10-15
4. Structural and sputtering effects of medium energy ion bombardment of silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-09
5. Damage production in low-energy Au and Si irradiation of a-Si: Influence of projectile mass;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-04
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