Dependence of the critical thickness on Si doping of InGaAs on GaAs-Reference-Cited by-同舟云学术

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Dependence of the critical thickness on Si doping of InGaAs on GaAs

Published:2000-10-02 Issue:14 Volume:77 Page:2156-2158
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tanner B. K.,Parbrook P. J.,Whitehouse C. R.,Keir A. M.,Johnson A. D.,Jones J.,Wallis D.,Smith L. M.,Lunn B.,Hogg J. H. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1315342

Reference16 articles.

1. Dislocations in strained-layer epitaxy: theory, experiment, and applications

2. Plastic relaxation and relaxed buffer layers for semiconductor epitaxy

3. Determination of the critical thickness of misfit dislocation multiplication usingin situdouble-crystal x-ray diffraction

4. Diffuse X-ray scattering from misfit dislocations at semiconductor hetero-interfaces

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1. UV-Induced Negative Growth of In Nanodroplets and Mounds from Ultrathin In Layers on Sublimated InP(110);Crystal Growth & Design;2023-09-19

2. Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation;Applied Physics Letters;2018-07-02

3. Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition;Journal of Crystal Growth;2013-02

4. Direct measurements of field-induced strain at magnetoelectric interfaces by grazing incidence x-ray diffraction;Applied Physics Letters;2013-01-07

5. Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures;Applied Physics Letters;2012-09-24

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