Study of oxygen influences on carbon doped silicon oxide low k thin films deposited by plasma enhanced chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1756696
Reference8 articles.
1. Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from tetramethylsilane
2. Low Dielectric Constant Materials for ULSI Interconnects
3. New solutions for intermetal dielectrics using trimethylsilane-based PECVD processes
4. Origin of low dielectric constant of carbon-incorporated silicon oxide film deposited by plasma enhanced chemical vapor deposition
5. Characterization of Carbon-Doped SiO[sub 2] Low k Thin Films: Preparation by Plasma-Enhanced Chemical Vapor Deposition from Tetramethylsilane
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