Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N-Reference-Cited by-同舟云学术

Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N

Published:2016-03-14 Issue:10 Volume:119 Page:105704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rigutti L.¹^ORCID,Mancini L.¹^ORCID,Hernández-Maldonado D.¹,Lefebvre W.¹,Giraud E.²,Butté R.²,Carlin J. F.²,Grandjean N.²^ORCID,Blavette D.¹,Vurpillot F.¹

Affiliation:

1. Groupe de Physique des Matériaux, UMR 6634 CNRS, University and INSA of Rouen, Normandie University, 76800 St. Etienne du Rouvray, France

2. Institute of Physics (IPhys), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

Funder

Agence Nationale de la Recherche (ANR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4943612

Reference55 articles.

1. Atom Probe Tomography of Electronic Materials

2. Atom probe tomography in nanoelectronics

3. Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

4. Phase separation in thick InGaN layers – A quantitative, nanoscale study by pulsed laser atom probe tomography

5. Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells

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