Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3610468
Reference14 articles.
1. Microstructural origins of localization in InGaN quantum wells
2. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
3. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
4. Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
5. Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering
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