Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography-Reference-Cited by-同舟云学术

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Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

Published:2013-04 Issue:13 Volume:102 Page:132112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mehrtens T.,Schowalter M.,Tytko D.,Choi P.,Raabe D.,Hoffmann L.,Jönen H.,Rossow U.,Hangleiter A.,Rosenauer A.

Funder

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4799382

Reference21 articles.

1. Band parameters for III–V compound semiconductors and their alloys

2. Optical bandgap energy of wurtzite InN

3. True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN

4. Structural and chemical investigation ofIn0.6Ga0.4AsStranski-Krastanow layers buried in GaAs by transmission electron microscopy

5. Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

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