Intraband emission at λ≈1.48μm from GaN∕AlN quantum dots at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2913756
Reference22 articles.
1. Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN
2. Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth
3. High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
4. A gallium nitride single-photon source operating at 200 K
5. Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells
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