Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature-Reference-Cited by-同舟云学术

Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature

Published:2019-05-07 Issue:17 Volume:125 Page:174505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mensz Piotr M.¹,Dror Ben¹^ORCID,Ajay Akhil²^ORCID,Bougerol Catherine³,Monroy Eva²^ORCID,Orenstein Meir¹,Bahir Gad¹

Affiliation:

1. Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel

2. Univ. Grenoble-Alpes, CEA, INAC, PHELIQS, 17 av. des Martyrs, 38000 Grenoble, France

3. Univ. Grenoble-Alpes, CNRS-Institut Néel, 25 av. des Martyrs, 38000 Grenoble, France

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5079408

Reference42 articles.

1. Light emitting diodes and the lighting revolution: The emergence of a solid-state lighting industry

2. Terahertz band: Next frontier for wireless communications

3. AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates

4. GaN-on-Silicon – Present capabilities and future directions

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