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A study of capping layers for sulfur monolayer doping on III-V junctions

  • Published:2012-12-17 Issue:25 Volume:101 Page:253514
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Yum J. H.,Shin H. S.,Hill R.,Oh J.,Lee H. D.,Mushinski Ryan M.,Hudnall Todd W.,Bielawski C. W.,Banerjee S. K.,Loh W. Y.,Wang Wei-E,Kirsch Paul

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Boron Doping in Next-Generation Materials for Semiconductor Device;Characteristics and Applications of Boron;2022-10-26

2. Boron Monolayer Doping: Role of Oxide Capping Layer, Molecular Fragmentation, and Doping Uniformity at the Nanoscale;Advanced Materials Interfaces;2020-02-13

3. Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants;Journal of Materials Chemistry C;2020

4. Dendrimers as Dopant Atom Carriers;Dendrimers - Fundamentals and Applications;2018-04-25

5. Surface Functionalization Strategies for Monolayer Doping;Encyclopedia of Interfacial Chemistry;2018
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