Infrared p-n-junction diodes in epitaxial narrow gap PbTe layers on Si substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369685
Reference16 articles.
1. Infrared sensor arrays with 3-12 mu m cutoff wavelengths in heteroepitaxial narrow-gap semiconductors on silicon substrates
2. Photovoltaic IV-VI on Si infrared sensor arrays for thermal imaging
3. Thermal limitations in PbSnTe detectors
4. Detectivity limits for diffused junction PbSnTe detectors
5. Electrical and metallurgical examination of Pb1−xSnxTe/PbTe heterojunctions
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