Detectivity limits for diffused junction PbSnTe detectors-Reference-Cited by-同舟云学术

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Detectivity limits for diffused junction PbSnTe detectors

Published:1975-11 Issue:4 Volume:15 Page:317-329
ISSN:0020-0891
Container-title:Infrared Physics
language:en
Short-container-title:Infrared Physics

Author:

Johnson M.R.,Chapman R.A.,Wrobel J.S.

Publisher

Elsevier BV

Subject

General Engineering

Reference10 articles.

1. Physics of Semiconductor Devices;Sze,1969

2. Bate, R.T. Texas Instruments Incorporated, unpublished data.

3. Physics of Semiconductors;Moll,1964

4. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

5. Bate, R.T. Texas Instruments Incorporated, unpublished data.

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1. Development of high-operation-temperature (up to 150 K) mid-wave infrared photodetectors based on p–n junctions in PbTe single crystals;AIP Advances;2024-08-01

2. Recent Advances in Group III-V Nanowire Infrared Detectors;Advanced Optical Materials;2018-07-15

3. Radiation detectors based on PbSnTe:In films, sensitive in the terahertz range of the spectrum;Optoelectronics, Instrumentation and Data Processing;2016-09

4. Resonant nature of intrinsic defect energy levels in PbTe revealed by infrared photoreflectance spectroscopy;Applied Physics Letters;2014-07-14

5. Molecular-beam epitaxial growth and high-temperature performance of HgCdTe midwave infrared detectors;Journal of Electronic Materials;2002-03

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