Large remanent polarization in Ta-doped HfO2 thin films by reactive sputtering-Reference-Cited by-同舟云学术

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Large remanent polarization in Ta-doped HfO2 thin films by reactive sputtering

Published:2021-07-26 Issue:4 Volume:119 Page:042902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Luo Cai-Qin¹^ORCID,Kang Chao-Yang¹,Song Yan-Ling¹,Wang Wan-Ping¹,Zhang Wei-Feng¹

Affiliation:

1. Henan Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004, People's Republic of China

Funder

National Natural Science Foundation of China

Plan for Leading Talent of Fundamental Research of the Central China in 2020

Intelligence Introduction Plan of Henan Province in 2021

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0055068

Reference22 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm

3. The future of ferroelectric field-effect transistor technology

4. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

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1. Physical origin of hafnium-based ferroelectricity;Computational Materials Today;2024-12

2. First‐Principles Calculation of Basic Properties of Rhombohedral Hafnium Oxide with Space Group R3;physica status solidi (b);2024-06-08

3. Universal insights into the origin of ferroelectricity in doped hafnia;2024-04-18

4. Phase Identification of 850 nm Thick 7%YO_1.5–93%HfO₂ Films by Surface and Cross-Sectional Raman Spectroscopies;ACS Applied Electronic Materials;2024-04-05

5. The ferroelectric and piezoelectric properties of (Hf_1−xCe_x)O₂ films on indium tin oxide/Pt/TiO_x/SiO₂/(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method;Japanese Journal of Applied Physics;2024-04-01

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