A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems-Reference-Cited by-同舟云学术

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A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems

Published:2016-11-28 Issue:22 Volume:109 Page:223501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hsieh Cheng-Chih,Roy Anupam,Chang Yao-Feng^ORCID,Shahrjerdi Davood,Banerjee Sanjay K.

Funder

NASCENT NSF ERC

NSF NNCI

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4971188

Reference37 articles.

1. Memristor-The missing circuit element

2. The missing memristor found

3. Nanoionics-based resistive switching memories

4. Memory leads the way to better computing

5. Synaptic electronics: materials, devices and applications

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