Efficient p-type doping of 6H-SiC: Flash-lamp annealing after aluminum implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123429
Reference5 articles.
1. Physical Properties of SiC
2. Growth and Characterisation of SiC Power Device Material
3. Electrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantation
4. Activation of ion implanted dopants in α‐SiC
5. Al, Al/C and Al/Si implantations in 6H-SiC
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