Al, Al/C and Al/Si implantations in 6H-SiC-Reference-Cited by-同舟云学术

Al, Al/C and Al/Si implantations in 6H-SiC

Published:1996-01 Issue:1 Volume:25 Page:75-80
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Rao Mulpuri V.,Griffiths Peter,Gardner Jason,Holland O. W.,Ghezzo M.,Kretchmer J.,Kelner G.,Freitas J. A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02666177.pdf

Reference22 articles.

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2. J. Edmond, H. Kong, V. Dimitriev, G. Bulman and C. Carter, Jr.,Inst. Phys. Conf. Ser, No. 137, (1994), p. 515.

3. R.F. Davis, G. Kelner, M. Shur, J.W. Palmour and J.A. Edmond,Proc. IEEE 79, 677 (1991).

4. O. J. Marsh and H.L. Dunlap,Radiation Effects 6, 301 (1970).

5. J. Ryu, H.J. Kim, J.T. Glass and R.F. Davis,J. Electron. Mater. 18, 157 (1989), and other references therein.

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