Growth and Characterisation of SiC Power Device Material
Author:
Affiliation:
1. Linköping University
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.264-268.97.pdf
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fundamental research on semiconductor SiC and its applications to power electronics;Proceedings of the Japan Academy, Series B;2020-07-31
2. High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications;MRS Proceedings;2006
3. Effects of C/Si ratio in fast epitaxial growth of 4H–SiC(0001) by vertical hot-wall chemical vapor deposition;Journal of Crystal Growth;2005-08
4. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices;Japanese Journal of Applied Physics;2004-10-08
5. Uniformity of 4H–SiC epitaxial layers grown on 3-in diameter substrates;Journal of Crystal Growth;2003-10
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