Capping of InAs quantum dots grown on (311)B InP studied by cross-sectional scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2221884
Reference16 articles.
1. InAs self‐assembled quantum dots on InP by molecular beam epitaxy
2. Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)
3. Wavelength tuning of InAs quantum dots grown on (311)B InP
4. Achievement of High Density InAs Quantum Dots on InP (311)B Substrate Emitting at 1.55 µm
5. High-gain and low-threshold InAs quantum-dot lasers on InP
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