Achievement of High Density InAs Quantum Dots on InP (311)B Substrate Emitting at 1.55 µm-Reference-Cited by-同舟云学术

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Achievement of High Density InAs Quantum Dots on InP (311)B Substrate Emitting at 1.55 µm

Published:2005-08-12 Issue:No. 34 Volume:44 Page:L1069-L1071
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Caroff P.,Bertru N.,Le Corre A.,Dehaese O.,Rohel T.,Alghoraibi I.,Folliot H.,Loualiche S.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of as flux rate during growth interruption on the performances of InAs/InGaAsP/InP quantum dots and their lasers grown by metal-organic chemical vapor deposition;Journal of Crystal Growth;2022-01

2. Analysis of Quantum-Dot Size Effect on Dynamic and Modulation Characteristics of InAS/InP (311)B QD-Laser Under Large-Signal Modulation;Journal of Nanoelectronics and Optoelectronics;2017-10-01

3. Investigation of dynamical characteristics and modulation response function of InAs/InP (311)B quantum dot lasers with different QD size;Photonics and Nanostructures - Fundamentals and Applications;2017-07

4. Simultaneous Selective-Area and Vapor–Liquid–Solid Growth of InP Nanowire Arrays;Nano Letters;2016-06-06

5. Lossless propagation in metal-semiconductor-metal plasmonic waveguides using quantum dot active medium;Applied Optics;2015-03-27

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