Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2802570
Reference16 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures
3. Spontaneous polarization and piezoelectric constants of III-V nitrides
4. Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
5. Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth
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