Electroluminescence observation and x‐ray topographic study of a nitrogen‐doped GaP‐LED
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323141
Reference7 articles.
1. Investigation of Inhomogeneities in GaAs by Electron-Beam Excitation
2. Correlation of Defect‐Impurity Interactions in GaP with Local Variations in Photoluminescence
3. Dislocations in GaAs17−xPx
4. Correspondence between Nonradiative Dark Spots, Microplasma Emissions, and Dislocation Pits in GaP : N Light‐Emitting Diodes
5. Screw-type dislocations due to lattice mismatch in GaP: N/GaP epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Further scanning electron microscope studies of GaP electroluminescent diodes;Journal of Materials Science;1980-05
2. Electrical profiles of magnesium‐ion‐implanted GaP;Journal of Applied Physics;1979-03
3. Acoustic‐emission study of defects in GaP light‐emitting diodes;Applied Physics Letters;1978-09
4. Strukturdefekte in GaP/GaAs-Heteroepitaxieschichten;Kristall und Technik;1978
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