Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers-Reference-Cited by-同舟云学术

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Published:2018-07-23 Issue:4 Volume:113 Page:043501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Xuanqi¹^ORCID,Chen Hong¹,Fu Houqiang¹^ORCID,Baranowski Izak¹,Montes Jossue¹,Yang Tsung-Han¹,Fu Kai¹,Gunning Brendan P.²^ORCID,Koleske Daniel D.²,Zhao Yuji¹

Affiliation:

1. School of Electrical, Computer & Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

2. Sandia National Laboratories, MS 0601, P.O. Box 5800, Albuquerque, New Mexico 87185-0601, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5028530

Reference46 articles.

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3. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

4. Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

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