Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106, USA
2. Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USA
Funder
DTRA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4921633
Reference28 articles.
1. Molecular beam epitaxy for high-performance Ga-face GaN electron devices
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3. Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures
4. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
5. Tunneling hot electron transfer amplifiers (theta): Amplifiers operating up to the infrared
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