On positive charge formed under negative bias temperature stress
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2427109
Reference37 articles.
1. Post-irradiation behavior of the interface state density and the trapped positive charge
2. Oxide, interface, and border traps in thermal, N2O, and N2O‐nitrided oxides
3. A study of oxide traps and interface states of the silicon‐silicon dioxide interface
4. Lateral profiling of oxide charge and interface traps near MOSFET junctions
5. Positive charge generation in metal‐oxide‐semiconductor capacitors
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