Conversion of InP/In0.53Ga0.47As superlattices to Zn3P2/In1−xGaxAs and Zn3P2/Zn3As2superlattices by Zn diffusion
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101480
Reference11 articles.
1. InGaAs/InP superlattice mixing induced by Zn or Si diffusion
2. Molecular beam epitaxial growth of the II‐V semiconductor compound Zn3As2
3. Defect dominated conductivity in Zn3P2
4. Optical properties of zinc phosphide
5. Electrical and thermoelectrical properties of Zn3P2films grown by the hot wall epitaxy technique
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1. Single-Crystalline p-Type Zn3As2Nanowires for Field-Effect Transistors and Visible-Light Photodetectors on Rigid and Flexible Substrates;Advanced Functional Materials;2012-12-27
2. Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization;Journal of Crystal Growth;2011-01
3. Simultaneous Growth of Pure Hyperbranched Zn3As2 Structures and Long Ga2O3 Nanowires;Nano Letters;2009-03-30
4. Self-driven formation and structure of single crystal platelets of Zn3As2;Applied Physics Letters;2006-08-14
5. A TEM investigation of Zn3As2 grown on (001) and (111) InP by MOVPE;Journal of Materials Science;2001
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