InGaAs/InP superlattice mixing induced by Zn or Si diffusion
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100406
Reference12 articles.
1. Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy
2. Intermixing Process of InGaAs/InP MQW Grown by Metalorganic Molecular Beam Epitaxy at Thermal Annealing
3. Disorder of a GaxIn1-xAsyP1-y-InP quantum well by Zn diffusion
4. Zn‐diffusion‐induced intermixing of InGaAs/InP multiple quantum well structures
5. Disordering of InGaAs‐InP quantum wells by Si implantation
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2. Investigation of ion implantation induced intermixing in InP based quaternary quantum wells;Journal of Physics D: Applied Physics;2011-11-08
3. Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells;Semiconductor Science and Technology;2010-04-20
4. Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells;2008 International Conference on Nanoscience and Nanotechnology;2008-02
5. X-ray investigation of quantum well intermixing after postgrowth rapid thermal processing;Journal of Physics D: Applied Physics;2005-05-06
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