Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Molecular beam epitaxial growth of II–V semiconductor Zn3As2 and II–IV–V chalcopyrite ZnGeAs2
2. Conversion of InP/In0.53Ga0.47As superlattices to Zn3P2/In1−xGaxAs and Zn3P2/Zn3As2superlattices by Zn diffusion
3. Molecular beam epitaxial growth of the II‐V semiconductor compound Zn3As2
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1. Epitaxy;Encyclopedia of Condensed Matter Physics;2024
2. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015
3. Zn3As2 Nanowires and Nanoplatelets: Highly Efficient Infrared Emission and Photodetection by an Earth Abundant Material;Nano Letters;2014-12-03
4. Elevated temperature dependent transport properties of phosphorus and arsenic doped zinc oxide thin films;Journal of Applied Physics;2013-12-14
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