High capacitance density of 185 nF/mm2 achieved in three-dimensional MIM structures using TiO2 as a dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4986196
Reference22 articles.
1. Characterization and modeling of stacked MIM on-chip capacitors with high-capacitance density up to 20 GHz frequency region
2. Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors
3. High-density MIM capacitors using Al2O3 and AlTiOx dielectrics
4. A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO2 dielectrics
5. Atomic layer deposition of ZrO2 on W for metal–insulator–metal capacitor application
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1. Al2O3 blocking layer inserted ZrO2 Metal-Insulator-Metal capacitor for the improved electrical and interfacial properties;Thin Solid Films;2020-11
2. Enhanced electrical properties of ZrO2-TiN based capacitors by introducing ultrathin metal oxides;Materials Letters;2020-11
3. Chemistry of ruthenium as an electrode for metal–insulator–metal capacitor application;Nanotechnology;2020-10-28
4. Effect of Heat Budget After Capacitor Formation on the Leakage Current Characteristics of ZrO2-Based High-k Dielectrics for Next-Generation Dynamic Random-Access Memory Capacitors;Journal of Nanoscience and Nanotechnology;2020-01-01
5. Improvement of the electrical and interfacial propertie of TiN/ZrO2 by a modulated atomic layer deposition process with controlled O3 dosing;Thin Solid Films;2019-04
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