Cation vacancy formation energies in liquid‐phase‐epitaxial Hg1−xCdxTe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336078
Reference6 articles.
1. Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: I . Defect Structure of Undoped and Copper Doped
2. Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: I . Defect Structure of Undoped and Copper Doped
3. The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4Te
4. Annealing of Hg1−xCdxTe: Hg loss rates and annealing of ion implantation damage
5. Liquid Phase Growth of HgCdTe Epitaxial Layers
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