Liquid Phase Growth of HgCdTe Epitaxial Layers-Reference-Cited by-同舟云学术

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Liquid Phase Growth of HgCdTe Epitaxial Layers

Published:1980-01-01 Issue:1 Volume:127 Page:175-179
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Wang C. C.¹,Shin S. H.¹,Chu M.¹,Lanir M.¹,Vanderwyck A. H. B.¹

Affiliation:

1. Rockwell International Science Center, Thousand Oaks, California 91360

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2129611/pdf

Cited by 81 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Developments and Process Improvements Leading to High-Quality and Large-Area HgCdTe LPE Detectors;Journal of Electronic Materials;2023-07-02

2. Infinite-Melt Vertical Liquid-Phase Epitaxy of HgCdTe from Hg Solution: from VLWIR to SWIR;Journal of Electronic Materials;2022-07-20

3. CdTe/Si Composite Substrate and HgCdTe Epitaxy;Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN;2016

4. Influence of elastic strains on LPE growth kinetics in the Cd–Hg–Te system;Semiconductor physics, quantum electronics and optoelectronics;2007-10-31

5. Polyassociative thermodynamic model of A2B6 semiconductor melt and phase equilibria in Cd-Hg-Te system. p−T−x diagram of Cd-Hg-Te system;Semiconductor physics, quantum electronics and optoelectronics;2006-10-31

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