Experimental studies on the conduction mechanism and electrical properties of the inverted Ba doped ZnO nanoparticles based memristor-Reference-Cited by-同舟云学术

Experimental studies on the conduction mechanism and electrical properties of the inverted Ba doped ZnO nanoparticles based memristor

Published:2019-08-12 Issue:7 Volume:115 Page:073505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Mengren¹,Borowiec Joanna²^ORCID,Sun Lin J. Jun²,Konop Marek³,Rahman Mohammad M.⁴,Taallah Ayoub²,Boi Filippo S.²,Gillin William P.²⁵^ORCID

Affiliation:

1. Sichuan University-Pittsburgh Institute, Sichuan University, Chengdu 610207, China

2. College of Physical Science and Technology, and Sino-British Materials Research Institute, Sichuan University, Chengdu 610064, China

3. Department of Experimental Physiology and Pathophysiology, Laboratory of Center for Preclinical Research, Medical University of Warsaw, Warsaw 02-106, Poland

4. Institute of Physical Chemistry, Polish Academy of Sciences, Warsaw 01-224, Poland

5. Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS, United Kingdom

Funder

Sichuan University Full-time Post-doctoral Research and Development Fund

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5110888

Reference37 articles.

1. Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

2. Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets

3. Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension

4. Stretchable and conformable synapse memristors for wearable and implantable electronics

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