Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets-Reference-Cited by-同舟云学术

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Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets

Published:2015-12-17 Issue:1 Volume:16 Page:572-576
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Cheng Peifu¹,Sun Kai²,Hu Yun Hang¹

Affiliation:

1. Department of Materials Science and Engineering, Michigan Technological University, Houghton, Michigan 49931-1295, United States

2. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136, United States

Funder

Division of Chemical, Bioengineering, Environmental, and Transport Systems

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b04260

Reference29 articles.

1. Memristor-The missing circuit element

2. The missing memristor found

3. Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

4. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

5. Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers

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