Analysis of the short‐circuit current of a polycrystalline solar cell with excitation by a gated electron beam
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336569
Reference11 articles.
1. Determination of surface recombination velocity at a grain boundary using electron‐beam‐induced current
2. Measurement of spatial variations of the carrier lifetime in silicon power devices
3. Theory of lifetime measurements with the scanning electron microscope: Transient analysis
4. Analysis of the interaction of an electron beam with a solar cell—I
5. Analysis of the interaction of an electron beam with a solar cell—II
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1. Application and modeling of single contact electron beam induced current technique on multicrystalline silicon solar cells;Solar Energy Materials and Solar Cells;2015-02
2. Modulated electron-beam-induced current and cathodoluminescence;Materials Science and Engineering: B;1994-05
3. Time resolved OBIC/EBIC mapping of InGaAsP/InP photodiodes;Microelectronic Engineering;1994-03
4. Determination of grain‐boundary parameters of polycrystalline silicon by ac electron‐beam‐induced current;Journal of Applied Physics;1988-11
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