Electrical short‐circuit current decay: Practical utility and variations of the method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340333
Reference14 articles.
1. Unifying view of transient responses for determining lifetime and surface recombination velocity in silicon diodes and back-surface-field solar cells, with application to experimental short-circuit-current decay
2. Measurement of diffusion length in solar cells
3. Diffusion length and lifetime determination in p-n junction solar cells and diodes by forward-biased capacitance measurements
4. Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors
5. Measurement of diffusion length, lifetime, and surface recombination velocity in thin semiconductor layers
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1. Numerical simulation of time resolved charge transport in semiconductor structures for electronic devices;Journal of Computational Electronics;2006-07
2. Determination of polysilicon solar cell parameters using electrical short-circuit current decay method;Solid-State Electronics;1998-04
3. Applicability of electrical short circuit current decay for solar cell characterization: limits and comparison to other methods;Solar Energy Materials and Solar Cells;1995-03
4. Electron-beam-induced current quantitative mapping: application to Si solar cells;Materials Science and Engineering: B;1994-05
5. Régimes transitoires des photopiles : durée de vie des porteurs et vitesse de recombinaison;Journal de Physique III;1992-12
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