Photoionization cross sections in vanadium‐doped silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333827
Reference28 articles.
1. Impurities in silicon solar cells
2. Spin Resonance of Transition Metals in Silicon
3. Determination of deep energy levels in Si by MOS techniques
4. Degeneracy Ratios and Impurity Levels of Vanadium inn-Type Silicon by Hall Measurement
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1. Correlation of electrical and optical properties of the vanadium-related C level in silicon;Physical Review B;1997-02-15
2. Detection Methods;Metal Impurities in Silicon-Device Fabrication;1995
3. Properties of Rare Impurities;Metal Impurities in Silicon-Device Fabrication;1995
4. Properties of Transition Metals in Silicon;Metal Impurities in Silicon-Device Fabrication;1995
5. Practicable Method for Estimating Thermal Depths from Phonon-Broadened Photoexcitation Cross-Section Bands. III. Generalization for Charged Centres;physica status solidi (b);1993-09-01
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